发明申请
US20120177829A1 COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, METHOD FOR MANUFACTURING COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER
有权
用于形成二氧化硅基绝缘层的组合物，用于制造基于二氧化硅的绝缘层的组合物的方法，基于二氧化硅的绝缘层和用于制造基于二氧化硅的绝缘层的方法
- 专利标题： COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, METHOD FOR MANUFACTURING COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER
- 专利标题（中）： 用于形成二氧化硅基绝缘层的组合物，用于制造基于二氧化硅的绝缘层的组合物的方法，基于二氧化硅的绝缘层和用于制造基于二氧化硅的绝缘层的方法
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申请号： US13339728申请日： 2011-12-29
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公开(公告)号： US20120177829A1公开(公告)日： 2012-07-12
- 发明人: Sang-Hak LIM , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-II Han , Sang-Kyun Kim , Jin-Wook Lee
- 申请人： Sang-Hak LIM , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-II Han , Sang-Kyun Kim , Jin-Wook Lee
- 优先权： KR10-2011-0001802 20110107
- 主分类号： C08L83/00
- IPC分类号： C08L83/00 ; B05D3/02 ; B05D3/00
摘要：
A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:
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