发明申请
US20120178257A1 SOLUTIONS FOR CLEANING SEMICONDUCTOR STRUCTURES AND RELATED METHODS
有权
清洁半导体结构的解决方案及相关方法
- 专利标题： SOLUTIONS FOR CLEANING SEMICONDUCTOR STRUCTURES AND RELATED METHODS
- 专利标题（中）： 清洁半导体结构的解决方案及相关方法
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申请号： US12986770申请日： 2011-01-07
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公开(公告)号： US20120178257A1公开(公告)日： 2012-07-12
- 发明人: Sanjeev Sapra , Niraj Rana
- 申请人： Sanjeev Sapra , Niraj Rana
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; C11D7/60 ; B08B3/00
摘要：
A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.
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