公开(公告)号：US20120178257A1

公开(公告)日：2012-07-12

申请号：US12986770

申请日：2011-01-07

申请人： Sanjeev Sapra ,  Niraj Rana

发明人： Sanjeev Sapra ,  Niraj Rana

IPC分类号： H01L21/768 ,  C11D7/60 ,  B08B3/00

CPC分类号： C11D7/08 ,  C11D11/0047 ,  H01L21/02063

摘要： A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.

摘要翻译： 一种清洗半导体结构的方法，包括使半导体结构体至少含有一种氟化合物的水溶液和至少一种强酸，所述水溶液的pH值小于1.在一个实施方案中，水溶液包括水 ，盐酸和氢氟酸，水与盐酸的体积比与氢氟酸的比例为1000：32.5：1。 该水溶液可用于形成具有比常规清洁溶液更好的接触电阻和改进的临界尺寸偏差的接触塞。

公开(公告)号：US08546016B2

公开(公告)日：2013-10-01

申请号：US12986770

申请日：2011-01-07

申请人： Sanjeev Sapra ,  Niraj Rana

发明人： Sanjeev Sapra ,  Niraj Rana

IPC分类号： H01M6/04 ,  H01M6/16 ,  B08B3/00

CPC分类号： C11D7/08 ,  C11D11/0047 ,  H01L21/02063

摘要： A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.

摘要翻译： 一种清洗半导体结构的方法，包括使半导体结构体至少含有一种氟化合物的水溶液和至少一种强酸，所述水溶液的pH值小于1.在一个实施方案中，水溶液包括水 ，盐酸和氢氟酸，水与盐酸的体积比与氢氟酸的比例为1000：32.5：1。 该水溶液可用于形成具有比常规清洁溶液更好的接触电阻和改进的临界尺寸偏差的接触塞。

公开(公告)号：US20110180828A1

公开(公告)日：2011-07-28

申请号：US12693255

申请日：2010-01-25

申请人： Niraj Rana ,  Zaiyuan Ren

发明人： Niraj Rana ,  Zaiyuan Ren

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/24

摘要： Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

摘要翻译： 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态光器件包括具有N型氮化镓（GaN）材料的发光二极管，与N型GaN材料间隔开的P型GaN材料和氮化铟镓（InGaN） 材料直接在N型GaN材料和P型GaN材料之间。 N型GaN，InGaN和P型GaN材料中的至少一种具有非平面表面。

公开(公告)号：US20110111597A1

公开(公告)日：2011-05-12

申请号：US13004967

申请日：2011-01-12

申请人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

发明人： Niraj Rana ,  Nishant Sinha ,  Prashant Raghu ,  Jim Hofmann ,  Neil Greeley

IPC分类号： H01L21/31

CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/11807 ,  Y10S438/906 ,  Y10T29/43

摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.

摘要翻译： 一些实施例包括形成电容器的方法。 存储节点形成在材料内。 存储节点具有沿材料的侧壁。 去除一些材料以暴露侧壁的部分。 侧壁的暴露部分涂覆有未被水润湿的物质。 除去附加材料以暴露侧壁的未涂覆区域。 物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。 然后在电容器电介质材料上形成电容器电极材料。 一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

公开(公告)号：US07806988B2

公开(公告)日：2010-10-05

申请号：US10951997

申请日：2004-09-28

申请人： Niraj Rana ,  Kevin R. Shea

发明人： Niraj Rana ,  Kevin R. Shea

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02063 ,  B08B3/08 ,  C23F1/32 ,  C23F4/00

摘要： A method of removing a mask and addressing interfacial carbon chemisbored in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).

摘要翻译： 在半导体晶片中化学处理掩模和去除界面碳的方法开始于将半导体晶片放入干燥条形室中。 执行干燥剥离处理以去除半导体晶片上的掩模。 然后对半导体晶片进行清洁溶液以进行清洁处理以去除半导体晶片的表面上的颗粒并解决界面碳。 清洁溶液是含臭氧（O3）和氨（NH3）的水，或热磷酸（H 3 PO 4）的溶液。

公开(公告)号：US08476640B2

公开(公告)日：2013-07-02

申请号：US13412388

申请日：2012-03-05

申请人： Niraj Rana ,  Zaiyuan Ren

发明人： Niraj Rana ,  Zaiyuan Ren

IPC分类号： H01L29/20 ,  H01L33/32

CPC分类号： H01L33/0075 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/24

摘要： Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

摘要翻译： 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态光器件包括具有N型氮化镓（GaN）材料的发光二极管，与N型GaN材料间隔开的P型GaN材料和氮化铟镓（InGaN） 材料直接在N型GaN材料和P型GaN材料之间。 N型GaN，InGaN和P型GaN材料中的至少一种具有非平面表面。

公开(公告)号：US20120161151A1

公开(公告)日：2012-06-28

申请号：US13412388

申请日：2012-03-05

申请人： Niraj Rana ,  Zaiyuan Ren

发明人： Niraj Rana ,  Zaiyuan Ren

IPC分类号： H01L29/20 ,  H01L33/32

CPC分类号： H01L33/0075 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/24

摘要： Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

摘要翻译： 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态光器件包括具有N型氮化镓（GaN）材料的发光二极管，与N型GaN材料间隔开的P型GaN材料和氮化铟镓（InGaN） 材料直接在N型GaN材料和P型GaN材料之间。 N型GaN，InGaN和P型GaN材料中的至少一种具有非平面表面。

公开(公告)号：US07824505B2

公开(公告)日：2010-11-02

申请号：US11493053

申请日：2006-07-26

申请人： Niraj Rana ,  Kevin R. Shea

发明人： Niraj Rana ,  Kevin R. Shea

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02063 ,  B08B3/08 ,  C23F1/32 ,  C23F4/00

摘要： A method of removing a mask and addressing interfacial carbon chemisorbed in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).

摘要翻译： 在半导体晶片中化学吸附的掩模和去除界面碳的方法首先将半导体晶片放入干燥条形室中。 执行干燥剥离处理以去除半导体晶片上的掩模。 然后对半导体晶片进行清洁溶液以进行清洁处理以去除半导体晶片的表面上的颗粒并解决界面碳。 清洁溶液是含臭氧（O3）和氨（NH3）的水，或热磷酸（H 3 PO 4）的溶液。

公开(公告)号：US20080038896A1

公开(公告)日：2008-02-14

申请号：US11871569

申请日：2007-10-12

申请人： Niraj Rana

发明人： Niraj Rana

IPC分类号： H01L21/44

CPC分类号： H01L21/31111 ,  C09K13/08 ,  H01L27/10852 ,  H01L28/91

摘要： Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.

摘要翻译： 本文公开了在制造微特征装置中选择性蚀刻掺杂氧化物的方法。 用于在微特征工件上蚀刻材料的一种这样的方法的实施例包括提供包括掺杂氧化物层和与掺杂氧化物层相邻的氮化物层的微特征工件。 该方法包括用包含DI：HF和酸的蚀刻剂选择性地蚀刻掺杂的氧化物层，以提供蚀刻剂的pH，使得蚀刻剂包括（a）磷硅玻璃（PSG）对氮化物的选择性大于250:1 ，和（b）通过PSG的蚀刻速率大于9,000埃/分钟。

公开(公告)号：US07297639B2

公开(公告)日：2007-11-20

申请号：US11217894

申请日：2005-09-01

申请人： Niraj Rana

发明人： Niraj Rana

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31111 ,  C09K13/08 ,  H01L27/10852 ,  H01L28/91

摘要： Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.