Invention Application
US20120181614A1 Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
审中-公开
用于缓解短沟道效应和/或降低结电容的场效晶体管的结构和制造
- Patent Title: Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction Capacitance
- Patent Title (中): 用于缓解短沟道效应和/或降低结电容的场效晶体管的结构和制造
-
Application No.: US13309473Application Date: 2011-12-01
-
Publication No.: US20120181614A1Publication Date: 2012-07-19
- Inventor: Chih Sieh Teng , Constantin Bulucea , Chin-Miin Shyu , Fu-Cheng Wang , Prasad Chaparala
- Applicant: Chih Sieh Teng , Constantin Bulucea , Chin-Miin Shyu , Fu-Cheng Wang , Prasad Chaparala
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.1 μm deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.
Information query
IPC分类:
