发明申请
US20120182072A1 Self-Biasing Radio Frequency Circuitry 有权
自偏置射频电路

  • 专利标题: Self-Biasing Radio Frequency Circuitry
  • 专利标题(中): 自偏置射频电路
  • 申请号: US13348397
    申请日: 2012-01-11
  • 公开(公告)号: US20120182072A1
    公开(公告)日: 2012-07-19
  • 发明人: Jinho ParkYuan LuLi Lin
  • 申请人: Jinho ParkYuan LuLi Lin
  • 主分类号: H03F3/45
  • IPC分类号: H03F3/45 H03F3/26
Self-Biasing Radio Frequency Circuitry
摘要:
The present disclosure describes self-biasing radio frequency circuitry. In some aspects a radio frequency (RF) signal is amplified via a circuit having a first transistor configured to source current to an output of the circuit and a second transistor configured to sink current from the output of the circuit, and another signal is provided, without active circuitry, from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. By so doing, the output of the circuit can be biased without active circuitry which can reduce design complexity of and substrate area consumed by the circuit.
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