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20 条记录 (耗时 0.022 秒)

    Self-biasing radio frequency circuitry
    1.
    发明授权
    Self-biasing radio frequency circuitry 有权
    自偏置射频电路

    公开(公告)号：US08624673B2

    公开(公告)日：2014-01-07

    申请号：US13348397

    申请日：2012-01-11

    申请人： Jinho Park ,  Yuan Lu ,  Li Lin

    发明人： Jinho Park ,  Yuan Lu ,  Li Lin

    IPC分类号： H03F3/26

    CPC分类号： H03F3/3016 ,  H03F1/0272 ,  H03F1/083 ,  H03F3/195 ,  H03F3/3028 ,  H03F2200/294 ,  H03F2203/30021 ,  H03F2203/30027 ,  H03F2203/30031 ,  H03F2203/30033 ,  H03F2203/30036 ,  H03F2203/30084 ,  H03F2203/30117

    摘要： The present disclosure describes self-biasing radio frequency circuitry. In some aspects a radio frequency (RF) signal is amplified via a circuit having a first transistor configured to source current to an output of the circuit and a second transistor configured to sink current from the output of the circuit, and another signal is provided, without active circuitry, from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. By so doing, the output of the circuit can be biased without active circuitry which can reduce design complexity of and substrate area consumed by the circuit.

    摘要翻译： 本公开描述了自偏置射频电路。 在一些方面中，射频（RF）信号经由具有第一晶体管的电路被放大，该第一晶体管被配置为将电流源电流到电路的输出，以及第二晶体管，被配置为从电路的输出吸收电流，并且提供另一个信号， 没有有源电路，从电路的输出到第一晶体管的栅极有效地偏置电路输出处的电压。 通过这样做，电路的输出可以被偏置而没有有源电路，这可以降低电路消耗的设计复杂度和衬底面积。

    Self-Biasing Radio Frequency Circuitry
    3.
    发明申请
    Self-Biasing Radio Frequency Circuitry 有权
    自偏置射频电路

    公开(公告)号：US20120182072A1

    公开(公告)日：2012-07-19

    申请号：US13348397

    申请日：2012-01-11

    申请人： Jinho Park ,  Yuan Lu ,  Li Lin

    发明人： Jinho Park ,  Yuan Lu ,  Li Lin

    IPC分类号： H03F3/45 ,  H03F3/26

    CPC分类号： H03F3/3016 ,  H03F1/0272 ,  H03F1/083 ,  H03F3/195 ,  H03F3/3028 ,  H03F2200/294 ,  H03F2203/30021 ,  H03F2203/30027 ,  H03F2203/30031 ,  H03F2203/30033 ,  H03F2203/30036 ,  H03F2203/30084 ,  H03F2203/30117

    摘要： The present disclosure describes self-biasing radio frequency circuitry. In some aspects a radio frequency (RF) signal is amplified via a circuit having a first transistor configured to source current to an output of the circuit and a second transistor configured to sink current from the output of the circuit, and another signal is provided, without active circuitry, from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. By so doing, the output of the circuit can be biased without active circuitry which can reduce design complexity of and substrate area consumed by the circuit.

    摘要翻译： 本公开描述了自偏置射频电路。 在一些方面中，射频（RF）信号经由具有第一晶体管的电路被放大，该第一晶体管被配置为将电流源电流到电路的输出，以及第二晶体管，被配置为从电路的输出吸收电流，并且提供另一个信号， 没有有源电路，从电路的输出到第一晶体管的栅极有效地偏置电路输出处的电压。 通过这样做，电路的输出可以被偏置而没有有源电路，这可以降低电路消耗的设计复杂度和衬底面积。

    Two-pin TR switch with switched capacitor
    5.
    发明授权
    Two-pin TR switch with switched capacitor 有权
    带开关电容器的双引脚TR开关

    公开(公告)号：US08886136B1

    公开(公告)日：2014-11-11

    申请号：US13449979

    申请日：2012-04-18

    申请人： David M. Signoff ,  Yung Chen ,  Jinho Park ,  Li Lin

    发明人： David M. Signoff ,  Yung Chen ,  Jinho Park ,  Li Lin

    IPC分类号： H04B1/44

    CPC分类号： H04B1/44

    摘要： A two-pin transmit/receive switch design includes a switching component configured to selectively switch in elements for a transmit signal path and elements for a receive signal path. A capacitor in the transmit signal path may be switched out when receiving signals on the receive signal path. Being able to selectively switch out the capacitor allows the capacitor value to be selected for optimal operation during transmit mode. For example, insertion loss may be minimized. In addition, elements in the receive signal path may be optimized (e.g., impedance matching) without being affected by or affecting the optimization that was performed for the transmit signal path.

    摘要翻译： 双引脚发射/接收开关设计包括被配置为选择性地切换用于发射信号路径的元件和用于接收信号路径的元件的开关部件。 当在接收信号路径上接收到信号时，发送信号路径中的电容器可以被切换。 能够选择性地切断电容器允许电容器值被选择以在发射模式期间获得最佳的操作。 例如，插入损耗可以被最小化。 此外，接收信号路径中的元件可以被优化（例如，阻抗匹配），而不受对发射信号路径执行的优化的影响或影响。

    SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICES HAVING THROUGH-VIAS AND METHODS FOR FABRICATING THE SAME 审中-公开
    具有通孔的半导体器件及其制造方法

    公开(公告)号：US20150243637A1

    公开(公告)日：2015-08-27

    申请号：US14709840

    申请日：2015-05-12

    申请人： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

    发明人： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

    IPC分类号： H01L25/065 ,  G11C8/00 ,  G11C16/08 ,  H01L23/544

    摘要： A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

    摘要翻译： 提供半导体器件的导电通孔，其沿垂直方向穿过衬底延伸，导电通孔的第一端延伸穿过衬底的第一表面，使得第一端相对于衬底的第一表面在垂直方向上突出 底物。 绝缘层设置在导电通孔的第一端和基板的第一表面上。 除去掩模层图案的上部，使得在导电通孔的第一端上的绝缘层的封盖部分露出。 去除绝缘层的与导电通孔相隔一定距离的一部分，以在绝缘层中形成凹陷。 同时去除导电通孔第一端上的绝缘层的封盖部分。

    Organic light emitting diode display and method of manufacturing the same
    8.
    发明授权
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号：US08378362B2

    公开(公告)日：2013-02-19

    申请号：US12779512

    申请日：2010-05-13

    申请人： Jeonghaeng Heo ,  Hyunsuk Kim ,  Jinho Park

    发明人： Jeonghaeng Heo ,  Hyunsuk Kim ,  Jinho Park

    IPC分类号： H01L51/52

    CPC分类号： H01L51/5048 ,  H01L27/3244

    摘要： An organic light emitting diode display and a method of manufacturing the same are disclosed. The organic light emitting diode display includes a substrate, a first electrode positioned on the substrate, an organic light emitting layer positioned on the first electrode, and a second electrode positioned on the organic light emitting layer. The organic light emitting layer includes an inorganic oxide layer between a light emitting layer and a common layer.

    摘要翻译： 公开了一种有机发光二极管显示器及其制造方法。 有机发光二极管显示器包括基板，位于基板上的第一电极，位于第一电极上的有机发光层和位于有机发光层上的第二电极。 有机发光层包括在发光层和公共层之间的无机氧化物层。

    Metal interconnect of semiconductor device
    9.
    发明授权
    Metal interconnect of semiconductor device 有权
    半导体器件的金属互连

    公开(公告)号：US08319348B2

    公开(公告)日：2012-11-27

    申请号：US12722643

    申请日：2010-03-12

    申请人： Jongmyeong Lee ,  Zungsun Choi ,  Gilheyun Choi ,  Byung-Lyul Park ,  Jinho Park ,  Hye Kyung Jung

    发明人： Jongmyeong Lee ,  Zungsun Choi ,  Gilheyun Choi ,  Byung-Lyul Park ,  Jinho Park ,  Hye Kyung Jung

    IPC分类号： H01L23/48

    CPC分类号： H01L23/528 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided are a metal interconnect of a semiconductor device and a method of fabricating the metal interconnect. The metal interconnect includes a metal line having a first end and a second end disposed on an opposite side to the first end, a via electrically connected to the metal line, and a non-active segment extending from the first end and including a void. Tensile stress is decreased to prevent a void from occurring under the via. Accordingly, line breakage due to electromigration is substantially prevented, thus improving electrical characteristics of the device.

    摘要翻译： 提供半导体器件的金属互连和制造金属互连的方法。 金属互连包括金属线，其具有设置在与第一端相对的第一端和第二端，电连接到金属线的通孔和从第一端延伸并且包括空隙的非活性段。 减小拉伸应力以防止孔下方发生空隙。 因此，基本上防止了电迁移引起的线路断线，从而提高了器件的电气特性。