A memory unit includes memory cells each having a memory element and a transistor, word lines and first and second bit lines, and a drive section. In performing setting operation for a first memory element located on one word line and in performing resetting operation for a second memory element located on the one word line, the drive section applies a given word line electric potential to the one word line, and sets an electric potential of a bit line on a lower electric potential side out of the first and the second bit lines corresponding to the first memory element to a value higher than a value of an electric potential of a bit line on the lower electric potential side corresponding to the second memory element by an amount of given electric potential difference.