发明申请
US20120182787A1 CROSS-POINT MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING CROSS-POINT MEMORY DEVICES AND METHODS OF ACCESSING A PLURALITY OF MEMORY CELLS IN A CROSS-POINT MEMORY ARRAY
有权
跨点存储器件，包括跨点存储器件的电子系统和在一个十字形存储器阵列中存取大量存储器单元的方法
- 专利标题： CROSS-POINT MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING CROSS-POINT MEMORY DEVICES AND METHODS OF ACCESSING A PLURALITY OF MEMORY CELLS IN A CROSS-POINT MEMORY ARRAY
- 专利标题（中）： 跨点存储器件，包括跨点存储器件的电子系统和在一个十字形存储器阵列中存取大量存储器单元的方法
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申请号： US13430970申请日： 2012-03-27
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公开(公告)号： US20120182787A1公开(公告)日： 2012-07-19
- 发明人: David H. Wells , Jun Liu
- 申请人： David H. Wells , Jun Liu
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Memory devices comprise a plurality of memory cells, each memory cell including a memory element and a selection device. A plurality of first (e.g., row) address lines can be adjacent (e.g., under) a first side of at least some cells of the plurality. A plurality of second (e.g., column) address lines extend across the plurality of row address lines, each column address line being adjacent (e.g., over) a second, opposing side of at least some of the cells. Control circuitry can be configured to selectively apply a read voltage or a write voltage substantially simultaneously to the address lines. Systems including such memory devices and methods of accessing a plurality of cells at least substantially simultaneously are also disclosed.
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