发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13355950申请日： 2012-01-23
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公开(公告)号： US20120187396A1公开(公告)日： 2012-07-26
- 发明人: Shunpei YAMAZAKI , Teruyuki FUJII , Sho NAGAMATSU
- 申请人： Shunpei YAMAZAKI , Teruyuki FUJII , Sho NAGAMATSU
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2011-014620 20110126
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/44
摘要：
A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed.
公开/授权文献
- US08865555B2 Semiconductor device and manufacturing method thereof 公开/授权日：2014-10-21
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