A semiconductor laser device includes a semiconductor laminate structure that includes a light emitting layer that contains In, a p-type guide layer disposed at one side of the light emitting layer, an n-type guide layer disposed at another side of the light emitting layer; a p-type clad layer disposed at an opposite side of the p-type guide layer to the light emitting layer, and an n-type clad layer disposed at an opposite side of the n-type guide layer to the light emitting layer. The semiconductor laminate structure includes a rectilinear waveguide formed parallel to a projection vector of a c-axis onto the crystal growth surface, and a pair of laser resonance surfaces formed of cleavage planes perpendicular to the projection vector.