公开(公告)号：US08013356B2

公开(公告)日：2011-09-06

申请号：US12239156

申请日：2008-09-26

Applicant: Taketoshi Tanaka ,  Kuniyoshi Okamoto

Inventor： Taketoshi Tanaka ,  Kuniyoshi Okamoto

IPC: H01L33/00

CPC classification number: H01L33/38 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

Abstract: A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.

Abstract translation: 半导体发光器件具有由具有由非极性平面限定的主表面的III族氮化物半导体制成的器件体。 在器件主体中，与n型电极的接触部分包括不同于主表面的晶体面。 例如，接触部分可以包括波纹表面。 更具体地，接触部分可以包括具有平行于以条纹方式形成的极平面的多个突起的区域。

公开(公告)号：US20100189155A1

公开(公告)日：2010-07-29

申请号：US12451604

申请日：2008-05-21

Applicant: Taketoshi Tanaka ,  Kuniyoshi Okamoto ,  Hiroaki Ohta

Inventor： Taketoshi Tanaka ,  Kuniyoshi Okamoto ,  Hiroaki Ohta

IPC: H01S5/026

CPC classification number: H01S5/02212 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4087

Abstract: Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green LD 1 and a red LD 2 are bonded to the metal wiring 4. Each of the green LD 1 and the red LD 2 is a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring 4, and the other electrode is connected to a lead wire 6 or a lead wire 7. The green LD 1 is formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LD 2 is formed of an AlInGaP-based semiconductor laser diode.

Abstract translation: 提供了具有包括绿色区域等中的振荡波长的多个波长的光源并且能够小型化的激光发光装置。 金属布线4形成在支撑基板5上。绿色LD1和红色LD2接合到金属布线4.绿色LD1和红色LD2中的每一个是由半导体形成的激光二极管元件 分层结构。 元件的正极和负极中的一个被接合到金属布线4，另一个电极连接到引线6或引线7.绿色LD1由GaN基半导体激光器 具有非极性平面或半极性平面的二极管作为晶体生长的主表面。 红色LD2由AlInGaP基半导体激光二极管形成。

公开(公告)号：US20080179610A1

公开(公告)日：2008-07-31

申请号：US11876642

申请日：2007-10-22

Applicant: Kuniyoshi OKAMOTO ,  Satoshi Nakagawa ,  Hiroki Tujimura

Inventor： Kuniyoshi OKAMOTO ,  Satoshi Nakagawa ,  Hiroki Tujimura

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/46 ,  H01L33/16 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44

Abstract: A semiconductor light emission device including: a nitride semiconductor stack having an active layer capable of emitting light, a growth surface of the nitride semiconductor stack being a substantially nonpolar plane or substantially semipolar plane; and a reflection section formed in a surface of the device opposite to a light extraction surface through which the light emitted from the active layer is extracted, the reflection section reflecting the light to the light extraction surface.

Abstract translation: 一种半导体发光器件，包括：具有能够发光的有源层的氮化物半导体堆叠，所述氮化物半导体堆叠的生长表面是基本非极性平面或基本上为半极性的平面; 以及反射部，形成在与从所述有源层发射的光所取出的与所述光提取面相反的装置的表面中，所述反射部将所述光反射到所述光提取面。

公开(公告)号：US08124982B2

公开(公告)日：2012-02-28

申请号：US12451920

申请日：2008-06-05

Applicant: Kuniyoshi Okamoto ,  Hiroaki Ohta

Inventor： Kuniyoshi Okamoto ,  Hiroaki Ohta

IPC: H01L33/02 ,  H01L33/16

CPC classification number: H01S5/32341 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2302/00

Abstract: The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°

Abstract translation: 半导体发光元件包括具有包含In的有源层以及层叠以将活性层保持在其间的p型层和n型层的III族氮化物半导体多层结构。 III族氮化物半导体多层结构由具有由c轴方向的偏移角为负的非极性平面限定的主面的III族氮化物半导体构成。 当有源层的发射波长不小于450nm时，可获得显着的效果。 在构成III族氮化物半导体多层结构的III族氮化物半导体中，偏移角＆ 在c轴方向上优选满足-1°<θ; <0°。

公开(公告)号：US07869482B2

公开(公告)日：2011-01-11

申请号：US12385238

申请日：2009-04-02

Applicant: Masashi Kubota ,  Kuniyoshi Okamoto ,  Taketoshi Tanaka

Inventor： Masashi Kubota ,  Kuniyoshi Okamoto ,  Taketoshi Tanaka

IPC: H01S3/00 ,  H01S3/10 ,  H01S5/00 ,  H01S3/08

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0288 ,  H01S5/2004 ,  H01S5/3211

Abstract: A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λc of a reflectance spectrum satisfies the relation λSP−10 nm≦λc≦λSP+10 nm with respect to an emission peak wavelength λSP of spontaneous emission in the active layer.

Abstract translation: 半导体激光器件由具有由非极性平面或半极性平面限定的主要生长表面的III族氮化物半导体制成。 半导体激光器件包括具有包含In的有源层和分布布置的布拉格反射器的空腔，其分别涂覆腔的两个空腔端面。 在每个分布布拉格反射器中，反射光谱的中心波长λc相对于有源层中的自发发射的发射峰值波长λSP满足关系λSP-10nm＆lt; nlE;λc＆nlE;λSP+ 10nm。

公开(公告)号：US20090095973A1

公开(公告)日：2009-04-16

申请号：US12239156

申请日：2008-09-26

Applicant: Taketoshi TANAKA ,  Kuniyoshi Okamoto

Inventor： Taketoshi TANAKA ,  Kuniyoshi Okamoto

IPC: H01L33/00

CPC classification number: H01L33/38 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

Abstract: A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.

Abstract translation: 半导体发光器件具有由具有由非极性平面限定的主表面的III族氮化物半导体制成的器件体。 在器件主体中，与n型电极的接触部分包括不同于主表面的晶体面。 例如，接触部分可以包括波纹表面。 更具体地，接触部分可以包括具有平行于以条纹方式形成的极平面的多个突起的区域。

公开(公告)号：US20090078944A1

公开(公告)日：2009-03-26

申请号：US12230883

申请日：2008-09-05

Applicant: Masashi Kubota ,  Kuniyoshi Okamoto

Inventor： Masashi Kubota ,  Kuniyoshi Okamoto

IPC: H01L33/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/18 ,  H01S5/2201 ,  H01S5/3202

Abstract: This semiconductor light emitting device includes an optical cavity made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane and including a pair of cavity end faces parallel to c-planes, and a reflecting portion made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane and having a reflective facet opposed to one of the pair of cavity end faces and inclined with respect to a normal of the major growth surface. The optical cavity and the reflecting portion may be crystal-grown from the major surface of the substrate. The substrate is preferably a group III nitride semiconductor substrate having a major surface defined by a nonpolar plane.

Abstract translation: 该半导体发光器件包括由具有由非极性平面限定的主要生长表面并且包括平行于c面的一对空腔端面的III族氮化物半导体制成的光学腔，以及由III族氮化物 半导体具有由非极性平面限定的主要生长表面并且具有与所述一对腔端面中的一个相对的反射小面并且相对于主生长表面的法线倾斜。 光腔和反射部分可以从衬底的主表面晶体生长。 衬底优选为具有由非极性平面限定的主表面的III族氮化物半导体衬底。

公开(公告)号：US20080128729A1

公开(公告)日：2008-06-05

申请号：US11877416

申请日：2007-10-23

Applicant: Kuniyoshi Okamoto

Inventor： Kuniyoshi Okamoto

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/40

Abstract: A semiconductor light emission device includes: a nitride semiconductor stack including an active layer capable of emitting light, a growth surface of the nitride semiconductor stack being a substantially nonpolar plane or substantially semipolar plane; and a metallic reflection layer in Schottky contact formed in a surface of the device opposite to a light extraction surface through which the light emitted from the active layer is extracted, the reflection section reflecting the light to the light extraction surface.

Abstract translation: 半导体发光器件包括：氮化物半导体堆叠，其包括能够发光的有源层，所述氮化物半导体堆叠的生长表面是基本上非极性平面或基本上是半极性的平面; 以及形成在所述器件的与所述有源层发射的光相反的光提取面的表面的金属反射层，所述反射部将所述光反射到所述光提取面。

公开(公告)号：US08017932B2

公开(公告)日：2011-09-13

申请号：US12443247

申请日：2007-09-21

Applicant: Kuniyoshi Okamoto ,  Hiroaki Ohta

Inventor： Kuniyoshi Okamoto ,  Hiroaki Ohta

IPC: H01L33/00

CPC classification number: H01L33/42 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L2224/04042 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/3025 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.

Abstract translation: 发光器件包括由具有由非极性平面或半极性面限定的主表面并具有至少n型层和p型的III族氮化物半导体构成的多层结构的III族氮化物半导体层 层。 光提取侧的III族氮化物半导体层的表面是镜面。 发光装置还可以包括与光提取侧的III族氮化物半导体层的表面接触的透明电极。 在这种情况下，光提取侧的透明电极的表面优选为镜面。

公开(公告)号：US07843980B2

公开(公告)日：2010-11-30

申请号：US12153278

申请日：2008-05-15

Applicant: Hiroaki Ohta ,  Kuniyoshi Okamoto

Inventor： Hiroaki Ohta ,  Kuniyoshi Okamoto

IPC: H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2004 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S2304/00

Abstract: An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.

Abstract translation: 本发明的半导体激光二极管包括具有由非极性或半极性平面限定的主晶体生长面的III族氮化物半导体层状结构。 III族氮化物半导体层状结构包括：p型覆层和n型覆层; 包含p型引导层和保持在p型覆层和n型覆层之间的In含有n型引导层; 以及保持在p型引导层和n型引导层之间的含In发光层。