The present invention is to provide a hydrophilic monomer, and hydrophilic photoresist composition containing the same. The photoresist composition further comprises a hydrophilic resin. The hydrophilic monomer and the hydrophilic resin respectively have a hydrophilic group which is used to react to H2O for the purpose of solving them in pure water. The present invention is also to provide a resist pattern formation method comprising spin coating a hydrophilic photoresist composition on a surface of a substrate to limit a photoresist layer. As a result, the photoresist layer can be developed by pure water. The present invention seeks to overcome the deficiencies in prior art which result in pollution of the environment and cost of photolithography by using basic developing solvent.