发明申请
- 专利标题： PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
- 专利标题（中）： 等离子体处理装置和等离子体处理方法
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申请号： US13391196申请日： 2010-08-10
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公开(公告)号： US20120190208A1公开(公告)日： 2012-07-26
- 发明人: Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
- 申请人： Toshihisa Ozu , Naoki Matsumoto , Takashi Tsukamoto , Kazuto Takai
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-191354 20090820; JP2009-191355 20090820
- 国际申请： PCT/JP2010/063543 WO 20100810
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
公开/授权文献
- US08771537B2 Plasma treatment device and plasma treatment method 公开/授权日：2014-07-08
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