发明申请
US20120190216A1 ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION
审中-公开
高性能补充金属氧化物半导体（CMOS）器件制造的退火技术
- 专利标题： ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION
- 专利标题（中）： 高性能补充金属氧化物半导体（CMOS）器件制造的退火技术
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申请号： US13097931申请日： 2011-04-29
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公开(公告)号： US20120190216A1公开(公告)日： 2012-07-26
- 发明人: Kevin K. Chan , Eric C. Harley , Isaac Lauer , Kam-Leung Lee , Paul A. Ronsheim
- 申请人： Kevin K. Chan , Eric C. Harley , Isaac Lauer , Kam-Leung Lee , Paul A. Ronsheim
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; B82Y40/00
摘要：
A semiconductor structure is provided. In some cases, an absorber having a low deposition temperature is applied to at least a portion of the structure. At least a portion of the structure is subjected to a long flash anneal process.