Invention Application
- Patent Title: HIGH DYNAMIC RANGE PIXEL STRUCTURE
- Patent Title (中): 高动态范围像素结构
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Application No.: US13362082Application Date: 2012-01-31
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Publication No.: US20120193516A1Publication Date: 2012-08-02
- Inventor: Jan BOGAERTS
- Applicant: Jan BOGAERTS
- Priority: GB1101742.3 20110201
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L31/102 ; G01J1/44
Abstract:
A pixel structure comprises a photo-sensitive element PPD for generating charges in response to light and a charge conversion element FD. A first transfer gate TX is connected between the photo-sensitive element PPD and the charge conversion element. A charge storage element PG is connected to the photo-sensitive element PPD. The charge storage element PG has a higher charge storage density than the photo-sensitive element PPD. The charge storage element PG is located on the photo-sensitive element PPD side of the first transfer gate TX and is arranged to collect charges generated by the photo-sensitive element PPD during an integration period. The charge storage element can be a photo gate, photodiode or capacitor. Arrangements are provided with, and without, a potential barrier between the photo-sensitive element PPD and the charge storage element PG.
Public/Granted literature
- US08710419B2 High dynamic range pixel structure Public/Granted day:2014-04-29
Information query
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