Invention Application
US20120193638A1 METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
有权
通过金属有机化学气相沉积法制备高品质N面GaN，InN和AlIN及其合金的异相生长方法
- Patent Title: METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
- Patent Title (中): 通过金属有机化学气相沉积法制备高品质N面GaN，InN和AlIN及其合金的异相生长方法
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Application No.: US13444011Application Date: 2012-04-11
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Publication No.: US20120193638A1Publication Date: 2012-08-02
- Inventor: Stacia Keller , Umesh K. Mishra , Nicholas A. Fichtenbaum
- Applicant: Stacia Keller , Umesh K. Mishra , Nicholas A. Fichtenbaum
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L21/20
Abstract:
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.
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