Invention Application
US20120193714A1 SOI SUBSTRATE, METHOD OF MANUFACTURING THE SOI SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
有权
SOI衬底，制造SOI衬底的方法，半导体器件以及制造半导体器件的方法
- Patent Title: SOI SUBSTRATE, METHOD OF MANUFACTURING THE SOI SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- Patent Title (中): SOI衬底，制造SOI衬底的方法，半导体器件以及制造半导体器件的方法
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Application No.: US13362093Application Date: 2012-01-31
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Publication No.: US20120193714A1Publication Date: 2012-08-02
- Inventor: MASAO OKIHARA
- Applicant: MASAO OKIHARA
- Applicant Address: JP TOKYO
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP TOKYO
- Priority: JP2011-020521 20110202
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/762 ; H01L21/336
Abstract:
Disclosed is an SOI substrate which includes a semiconductor base; a semiconductor layer formed over the semiconductor base; and a buried insulating film which is disposed between the semiconductor base and the semiconductor layer, so as to electrically isolate the semiconductor layer from the semiconductor base, where the buried insulating film contains a nitride film.
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