发明申请
- 专利标题： CAPACITOR AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 电容器和半导体器件
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申请号： US13346172申请日： 2012-01-09
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公开(公告)号： US20120193759A1公开(公告)日： 2012-08-02
- 发明人: Yasuhiko Takemura
- 申请人： Yasuhiko Takemura
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2011-020493 20110202
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A capacitor that has an electrode of an n-type semiconductor that is provided in contact with one surface of a dielectric, has a work function of 5.0 eV or higher, preferably 5.5 eV or higher, and includes nitrogen and at least one of indium, tin, and zinc. Since the electrode has a high work function, the dielectric can have a high potential barrier, and thus even when the dielectric is as thin as 10 nm or less, a sufficient insulating property can be maintained. In particular, a striking effect can be obtained when the dielectric is formed of a high-k material.
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