发明申请
US20120196413A1 METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE
审中-公开
改善身体效能和结电容的方法和结构
- 专利标题： METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE
- 专利标题（中）： 改善身体效能和结电容的方法和结构
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申请号： US13432544申请日： 2012-03-28
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公开(公告)号： US20120196413A1公开(公告)日： 2012-08-02
- 发明人: Xiangdong Chen , Geng Wang , Da Zhang
- 申请人： Xiangdong Chen , Geng Wang , Da Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.