发明申请
- 专利标题： TRANSISTOR STRUCTURE
- 专利标题（中）： 晶体管结构
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申请号： US13450444申请日： 2012-04-18
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公开(公告)号： US20120199890A1公开(公告)日： 2012-08-09
- 发明人: Wen-Han Hung , Tsai-Fu Chen , Shyh-Fann Ting , Cheng-Tung Huang , Kun-Hsien Lee , Ta-Kang Lo , Tzyy-Ming Cheng
- 申请人： Wen-Han Hung , Tsai-Fu Chen , Shyh-Fann Ting , Cheng-Tung Huang , Kun-Hsien Lee , Ta-Kang Lo , Tzyy-Ming Cheng
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A transistor structure is provided in the present invention. The transistor structure includes: a substrate comprising a P-type well, a gate disposed on the P-type well, a first spacer disposed on the gate, an N-type source/drain region disposed in the substrate at two sides of the gate, a silicon cap layer covering the N-type source/drain region, a second spacer around the first spacer and the second spacer directly on and covering a portion of the silicon cap layer and a silicide layer disposed on the silicon cap layer.
公开/授权文献
- US08390073B2 Transistor structure 公开/授权日：2013-03-05
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