发明申请
- 专利标题： Nonvolatile Memory Devices And Driving Methods Thereof
- 专利标题（中）： 非易失存储器件及其驱动方法
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申请号： US13368769申请日： 2012-02-08
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公开(公告)号： US20120201080A1公开(公告)日： 2012-08-09
- 发明人: Kyung-Hwa KANG , Sang-Wan NAM , Donghyuk CHAE , ChiWeon YOON
- 申请人： Kyung-Hwa KANG , Sang-Wan NAM , Donghyuk CHAE , ChiWeon YOON
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2011-0011608 20110209
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/06 ; G11C16/08
摘要：
Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.
公开/授权文献
- US08971114B2 Nonvolatile memory devices and driving methods thereof 公开/授权日：2015-03-03
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