发明申请
- 专利标题： METHOD OF FORMING AN ISOLATION STRUCTURE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 形成隔离结构的方法和形成半导体器件的方法
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申请号： US13362142申请日： 2012-01-31
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公开(公告)号： US20120202336A1公开(公告)日： 2012-08-09
- 发明人: Joo-Sung PARK , Se-Myeong Jang , Gil-Sub Kim
- 申请人： Joo-Sung PARK , Se-Myeong Jang , Gil-Sub Kim
- 优先权： KR10-2011-0011408 20110209
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A method of forming an isolation structure includes forming a trench at an upper portion of a substrate, forming a first oxide layer on an inner wall of the trench, oxidizing a portion of the substrate adjacent to the trench to form a second oxide layer such that the portion of the substrate adjacent to the trench has the first oxide layer thereon, forming a nitride layer on the first oxide layer, and forming an insulation layer pattern on the nitride layer such that the insulation layer pattern fills a remaining portion of the trench.
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