Invention Application
US20120204040A1 AUTHENTICATING FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE AND METHOD
有权
认证电磁随机存取存储器(F-RAM)器件及方法
- Patent Title: AUTHENTICATING FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE AND METHOD
- Patent Title (中): 认证电磁随机存取存储器(F-RAM)器件及方法
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Application No.: US13355145Application Date: 2012-01-20
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Publication No.: US20120204040A1Publication Date: 2012-08-09
- Inventor: Kurt S. Schwartz , Qidao Li , Michael Borza
- Applicant: Kurt S. Schwartz , Qidao Li , Michael Borza
- Applicant Address: US CO Colorado Springs
- Assignee: Ramtron International Corporation
- Current Assignee: Ramtron International Corporation
- Current Assignee Address: US CO Colorado Springs
- Main IPC: G06F21/04
- IPC: G06F21/04 ; G06F12/14

Abstract:
An F-RAM authenticating memory device and method providing secure mutual authentication between a Host system and a memory in order to gain read/write access to the F-RAM user memory contents. The device and technique of the present invention uses an Advanced Encryption Standard AES128 encryption module in conjunction with a true hardware random number generator and basic exclusive OR (XOR) functions in order to achieve a secure algorithm with a relatively small amount of processing. Due to inherently faster write times than that of conventional floating gate non-volatile memory technologies, the use of F-RAM significantly reduces the time available to interfere with a critical security parameter (CSP) update. Moreover, unlike floating gate technologies, F-RAM's read vs. write current signature is balanced making it less prone to side channel attacks while also providing relatively faster erase times.
Public/Granted literature
- US08583942B2 Authenticating ferroelectric random access memory (F-RAM) device and method Public/Granted day:2013-11-12
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