发明申请
US20120204040A1 AUTHENTICATING FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE AND METHOD
有权
认证电磁随机存取存储器(F-RAM)器件及方法
- 专利标题: AUTHENTICATING FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE AND METHOD
- 专利标题(中): 认证电磁随机存取存储器(F-RAM)器件及方法
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申请号: US13355145申请日: 2012-01-20
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公开(公告)号: US20120204040A1公开(公告)日: 2012-08-09
- 发明人: Kurt S. Schwartz , Qidao Li , Michael Borza
- 申请人: Kurt S. Schwartz , Qidao Li , Michael Borza
- 申请人地址: US CO Colorado Springs
- 专利权人: Ramtron International Corporation
- 当前专利权人: Ramtron International Corporation
- 当前专利权人地址: US CO Colorado Springs
- 主分类号: G06F21/04
- IPC分类号: G06F21/04 ; G06F12/14
摘要:
An F-RAM authenticating memory device and method providing secure mutual authentication between a Host system and a memory in order to gain read/write access to the F-RAM user memory contents. The device and technique of the present invention uses an Advanced Encryption Standard AES128 encryption module in conjunction with a true hardware random number generator and basic exclusive OR (XOR) functions in order to achieve a secure algorithm with a relatively small amount of processing. Due to inherently faster write times than that of conventional floating gate non-volatile memory technologies, the use of F-RAM significantly reduces the time available to interfere with a critical security parameter (CSP) update. Moreover, unlike floating gate technologies, F-RAM's read vs. write current signature is balanced making it less prone to side channel attacks while also providing relatively faster erase times.
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