发明申请
- 专利标题： DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME
- 专利标题（中）： 外延生长缺陷控制结构，含有缺陷控制结构的发光装置及其形成方法
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申请号： US13028055申请日： 2011-02-15
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公开(公告)号： US20120205616A1公开(公告)日： 2012-08-16
- 发明人: Jianping Zhang , Hongmei Wang , Chunhui Yan
- 申请人： Jianping Zhang , Hongmei Wang , Chunhui Yan
- 申请人地址： US CA El Monte
- 专利权人： INVENLUX CORPORATION
- 当前专利权人： INVENLUX CORPORATION
- 当前专利权人地址： US CA El Monte
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; B82Y40/00 ; B82Y99/00
摘要：
A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device.
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