Invention Application
US20120205761A1 Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
有权
具有低开关电流和高热稳定性的非易失性磁存储器
- Patent Title: Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
- Patent Title (中): 具有低开关电流和高热稳定性的非易失性磁存储器
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Application No.: US13453928Application Date: 2012-04-23
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Publication No.: US20120205761A1Publication Date: 2012-08-16
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: AVALANCHE TECHNOLOGY, INC.
- Current Assignee: AVALANCHE TECHNOLOGY, INC.
- Current Assignee Address: US CA Fremont
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.
Public/Granted literature
- US08405174B2 Non-volatile magnetic memory with low switching current and high thermal stability Public/Granted day:2013-03-26
Information query
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