发明申请
US20120205763A1 NON-VOLATILE MAGNETIC MEMORY WITH LOW SWITCHING CURRENT AND HIGH THERMAL STABILITY
有权
具有低开关电流和高热稳定性的非易失性磁记忆体
- 专利标题： NON-VOLATILE MAGNETIC MEMORY WITH LOW SWITCHING CURRENT AND HIGH THERMAL STABILITY
- 专利标题（中）： 具有低开关电流和高热稳定性的非易失性磁记忆体
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申请号： US13455888申请日： 2012-04-25
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公开(公告)号： US20120205763A1公开(公告)日： 2012-08-16
- 发明人: Rajiv Yadav Ranjan , Parviz Keshtbod
- 申请人： Rajiv Yadav Ranjan , Parviz Keshtbod
- 申请人地址： US CA Fremont
- 专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.
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