发明申请
- 专利标题： Trench MOSFET and Method for Fabricating Same
- 专利标题（中）： 沟槽MOSFET及其制造方法
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申请号： US13031505申请日： 2011-02-21
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公开(公告)号： US20120211825A1公开(公告)日： 2012-08-23
- 发明人: Timothy D. Henson , Ling Ma , Hugo Burke , David P. Jones , Martin Carroll
- 申请人： Timothy D. Henson , Ling Ma , Hugo Burke , David P. Jones , Martin Carroll
- 申请人地址： US CA El Segndo
- 专利权人： INTERNATIONAL RECTIFIER CORPORATION
- 当前专利权人： INTERNATIONAL RECTIFIER CORPORATION
- 当前专利权人地址： US CA El Segndo
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.
公开/授权文献
- US08536645B2 Trench MOSFET and method for fabricating same 公开/授权日：2013-09-17
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