发明申请
- 专利标题： CIRCUIT AND METHOD FOR TESTING INSULATING MATERIAL
- 专利标题（中）： 绝缘材料测试电路及方法
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申请号： US13364091申请日： 2012-02-01
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公开(公告)号： US20120212245A1公开(公告)日： 2012-08-23
- 发明人: Angelo Pinto , Martin L. Villafana , You-Wen Yau , Homyar C. Mogul , Lavakumar Ranganathan , Rohan V. Gupte , Weijia Qi , Kent J. Pingrey , Carlos P. Aguilar , Paul J. Giotta , Leon Y. Leung , Jina M. Antosz , Bhupen M. Shah , Choh fei Yeap , Michael J. Campbell , Lawrence A. Elugbadebo , Allen A.B. Hogan
- 申请人： Angelo Pinto , Martin L. Villafana , You-Wen Yau , Homyar C. Mogul , Lavakumar Ranganathan , Rohan V. Gupte , Weijia Qi , Kent J. Pingrey , Carlos P. Aguilar , Paul J. Giotta , Leon Y. Leung , Jina M. Antosz , Bhupen M. Shah , Choh fei Yeap , Michael J. Campbell , Lawrence A. Elugbadebo , Allen A.B. Hogan
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 主分类号： G01R31/3187
- IPC分类号： G01R31/3187 ; H01L23/58
摘要：
An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.