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公开(公告)号:US20120212245A1
公开(公告)日:2012-08-23
申请号:US13364091
申请日:2012-02-01
申请人: Angelo Pinto , Martin L. Villafana , You-Wen Yau , Homyar C. Mogul , Lavakumar Ranganathan , Rohan V. Gupte , Weijia Qi , Kent J. Pingrey , Carlos P. Aguilar , Paul J. Giotta , Leon Y. Leung , Jina M. Antosz , Bhupen M. Shah , Choh fei Yeap , Michael J. Campbell , Lawrence A. Elugbadebo , Allen A.B. Hogan
发明人: Angelo Pinto , Martin L. Villafana , You-Wen Yau , Homyar C. Mogul , Lavakumar Ranganathan , Rohan V. Gupte , Weijia Qi , Kent J. Pingrey , Carlos P. Aguilar , Paul J. Giotta , Leon Y. Leung , Jina M. Antosz , Bhupen M. Shah , Choh fei Yeap , Michael J. Campbell , Lawrence A. Elugbadebo , Allen A.B. Hogan
IPC分类号: G01R31/3187 , H01L23/58
CPC分类号: G01R31/1263 , G01R31/025 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.
摘要翻译: 公开了一种集成电路。 集成电路包括绝缘材料层。 集成电路还包括金属结构。 此外,集成电路包括通过绝缘材料层的通孔,其通过向金属结构的两个相邻金属部件施加动态电压切换而耦合到用于测试绝缘材料的金属结构。