发明申请
- 专利标题: ION-ASSISTED PLASMA TREATMENT OF A THREE-DIMENSIONAL STRUCTURE
- 专利标题(中): 离子辅助等离子体处理三维结构
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申请号: US13401168申请日: 2012-02-21
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公开(公告)号: US20120213941A1公开(公告)日: 2012-08-23
- 发明人: Louis Steen , Ludovic Godet , Patrick M. Martin
- 申请人: Louis Steen , Ludovic Godet , Patrick M. Martin
- 申请人地址: US MA Gloucester
- 专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址: US MA Gloucester
- 主分类号: C23C16/50
- IPC分类号: C23C16/50 ; B08B7/00 ; C23C16/02 ; C23C16/52 ; C23C16/06
摘要:
A boundary between a plasma and a plasma sheath is controlled such that a portion of the shape is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Ions in the plasma are directed toward the workpiece. These ions can either seal pores or clean a material from a structure on the workpiece. This structure may, for example, have multiple sidewalls. A process that both cleans a material and seals pores in the structure may be performed.
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