The present disclosure provides a method. The method includes gathering advanced process control (APC) data from a subset of available wafers and a subset of available processing chambers. The method includes establishing a matrix that contains a plurality of cells. The cells each correspond to one of the available wafers and one of the available processing chambers. The matrix is partially filled by populating cells for which the APC data has been gathered. The method includes determining a plurality of chamber-coverage-rate (CCR) parameters associated with the matrix. The method includes optimizing the CCR parameters through an iteration process to obtain optimized CCR parameters. The method includes predicting an APC data value for a designated cell of the matrix based on the optimized CCR parameters. The designated cell is an empty cell before the predicting and is populated by the predicting.