发明申请
- 专利标题： SEMICONDUCTOR CHARGE STORAGE APPARATUS AND METHODS
- 专利标题（中）： 半导体充电储存装置和方法
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申请号： US13035700申请日： 2011-02-25
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公开(公告)号： US20120217564A1公开(公告)日： 2012-08-30
- 发明人: Sanh D. Tang , John K. Zahurak
- 申请人： Sanh D. Tang , John K. Zahurak
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28 ; H01L21/336 ; B82Y99/00
摘要：
Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is formed in a tier of semiconductor material and a tier of dielectric. A portion of the tier of semiconductor material exposed by the opening is processed so that the portion is doped differently than the remaining semiconductor material in the tier. At least substantially all of the remaining semiconductor material of the tier is removed, leaving the differently doped portion of the tier of semiconductor material as a charge storage structure. A tunneling dielectric is formed on a first surface of the charge storage structure and an an intergate dielectric is formed on a second surface of the charge storage structure. Additional embodiments are also described.
公开/授权文献
- US08759895B2 Semiconductor charge storage apparatus and methods 公开/授权日：2014-06-24
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