发明申请
- 专利标题： MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- 专利标题（中）： 磁性锁定磁条随机存取存储器（MRAM）
-
申请号： US13289372申请日： 2011-11-04
-
公开(公告)号： US20120217595A1公开(公告)日： 2012-08-30
- 发明人: Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
- 申请人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
- 申请人地址： US CA Fremont
- 专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人： AVALANCHE TECHNOLOGY, INC.
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/02
摘要：
A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
公开/授权文献
- US08492860B2 Magnetic random access memory with switching assist layer 公开/授权日：2013-07-23
信息查询
IPC分类:
