- 专利标题: SEMICONDUCTOR APPARATUS
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申请号: US13461848申请日: 2012-05-02
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公开(公告)号: US20120217620A1公开(公告)日: 2012-08-30
- 发明人: Makoto SAEN , Kenichi Osada , Masanao Yamaoka , Tomonori Sekiguchi
- 申请人: Makoto SAEN , Kenichi Osada , Masanao Yamaoka , Tomonori Sekiguchi
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JP2008-322224 20081218
- 主分类号: H01L25/065
- IPC分类号: H01L25/065
摘要:
The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
公开/授权文献
- US08508968B2 Semiconductor apparatus 公开/授权日:2013-08-13
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