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公开(公告)号：US08508968B2
公开(公告)日：2013-08-13
申请号：US13461848
申请日：2012-05-02
CPC分类号： H01L25/0657 , G11C5/02 , H01L25/18 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
摘要翻译： 通过采用其中执行一次发送的电路（TR-00T）和用于执行多个接收（TR-10R，TR-20R，TR-30R）的电路的连接拓扑结构来消除对中介操作的需要 连接到一个穿透电极组（例如，TSVGL-0）。 为了实现连接拓扑，即使在堆叠多个LSI的情况下，尤其是用于指定用于发送的各个穿透电极端口或用于接收的可编程存储器元件，以及地址分配 各个贯通电极端口安装在堆叠的LSI中。
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公开(公告)号：US20120217620A1
公开(公告)日：2012-08-30
申请号：US13461848
申请日：2012-05-02
IPC分类号： H01L25/065
CPC分类号： H01L25/0657 , G11C5/02 , H01L25/18 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
摘要翻译： 通过采用其中执行一次发送的电路（TR-00T）和用于执行多个接收（TR-10R，TR-20R，TR-30R）的电路的连接拓扑结构来消除对中介操作的需要 连接到一个穿透电极组（例如，TSVGL-0）。 为了实现连接拓扑，即使在堆叠多个LSI的情况下，尤其是用于指定用于发送的各个穿透电极端口或用于接收的可编程存储器元件，以及地址分配 各个贯通电极端口安装在堆叠的LSI中。
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公开(公告)号：US20100155921A1
公开(公告)日：2010-06-24
申请号：US12636758
申请日：2009-12-13
IPC分类号： H01L23/52 , H01L25/065
CPC分类号： H01L25/0657 , G11C5/02 , H01L25/18 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
摘要翻译： 通过采用其中执行一次发送的电路（TR-00T）和用于执行多个接收（TR-10R，TR-20R，TR-30R）的电路的连接拓扑结构来消除对中介操作的需要 连接到一个穿透电极组（例如，TSVGL-0）。 为了实现连接拓扑，即使在堆叠多个LSI的情况下，尤其是用于指定用于发送的各个穿透电极端口或用于接收的可编程存储器元件，以及地址分配 各个贯通电极端口安装在堆叠的LSI中。
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公开(公告)号：US08184463B2
公开(公告)日：2012-05-22
申请号：US12636758
申请日：2009-12-13
CPC分类号： H01L25/0657 , G11C5/02 , H01L25/18 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
摘要翻译： 通过采用其中执行一次发送的电路（TR-00T）和用于执行多个接收（TR-10R，TR-20R，TR-30R）的电路的连接拓扑结构来消除对中介操作的需要 连接到一个穿透电极组（例如，TSVGL-0）。 为了实现连接拓扑，即使在堆叠多个LSI的情况下，尤其是用于指定用于发送的各个穿透电极端口或用于接收的可编程存储器元件，以及地址分配 各个贯通电极端口安装在堆叠的LSI中。
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公开(公告)号：US07961545B2
公开(公告)日：2011-06-14
申请号：US12629981
申请日：2009-12-03
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/146 , G11C5/147 , G11C11/4125 , G11C11/417 , G11C2207/2227
摘要： A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
摘要翻译： 系统LSI中的逻辑电路设置有电源开关，以便在待机时切断开关，从而减少漏电流。 同时，系统LSI的SRAM电路控制衬底偏置以减少漏电流。
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公开(公告)号：US07911221B2
公开(公告)日：2011-03-22
申请号：US12335331
申请日：2008-12-15
申请人： Masanao Yamaoka , Kenichi Osada
发明人： Masanao Yamaoka , Kenichi Osada
IPC分类号： H03K19/00
CPC分类号： H03K19/00346
摘要： A speed performance measurement circuit that may perform speed performance measurement is provided between a first logic circuit and a second logic circuit. The speed performance measurement circuit includes a first flip flop that stores first data, a first delay circuit that delays the first data and generates second data, and a second flip flop that stores the second data. Furthermore, the speed performance measurement circuit includes a first comparator circuit that compares output of the first flip flop to output of the second flip flop, and a third flip flop that stores output data from the first comparator circuit in accordance with timing of the first clock signal. Data in a normal path is compared to data in a path delayed by a certain time to measure speed, and power voltage of a circuit is determined based on such comparison. Thus, change in speed with respect to power voltage in a critical path can be measured.
摘要翻译： 可以在第一逻辑电路和第二逻辑电路之间提供可执行速度性能测量的速度性能测量电路。 速度性能测量电路包括存储第一数据的第一触发器，延迟第一数据并产生第二数据的第一延迟电路和存储第二数据的第二触发器。 此外，速度性能测量电路包括第一比较器电路，其将第一触发器的输出与第二触发器的输出进行比较;以及第三触发器，其根据第一时钟的定时存储来自第一比较器电路的输出数据 信号。 将正常路径中的数据与延迟一定时间的路径中的数据进行比较以测量速度，并且基于这样的比较确定电路的功率电压。 因此，可以测量关键路径中的功率电压的速度变化。
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公开(公告)号：US07474584B2
公开(公告)日：2009-01-06
申请号：US11833190
申请日：2007-08-02
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/146 , G11C5/147 , G11C11/4125 , G11C11/417 , G11C2207/2227
摘要： A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
摘要翻译： 系统LSI中的逻辑电路设置有电源开关，以便在待机时切断开关，从而减少漏电流。 同时，系统LSI的SRAM电路控制衬底偏置以减少漏电流。
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8.发明授权公开(公告)号：US07397693B2
公开(公告)日：2008-07-08
申请号：US11657026
申请日：2007-01-24
IPC分类号： G11C11/00
CPC分类号： G11C11/417 , G11C11/412 , Y10S257/903
摘要： A memory using an SRAM memory cell intended for low-voltage operation is designed to decrease the threshold value of MOS transistors constituting the memory cell without substantial decrease in the static noise margin, which is the operational margin of the memory cell. To this end, a voltage Vdd′ higher than a power supply voltage Vdd of a power supply line for peripheral circuits is supplied from a power supply line for memory cells as a power supply voltage for memory cells. Since the conductance of driver MOS transistors is in-creased, the threshold voltage of the MOS transistors within the memory cells can be reduced without reducing the static noise margin. Further the ratio of width between the driver MOS transistor and a transfer MOS transistor can be set to 1, thereby allowing a reduction in the memory cell area.
摘要翻译： 使用用于低电压操作的SRAM存储单元的存储器被设计为降低构成存储器单元的MOS晶体管的阈值，而不会显着降低静态噪声容限，这是存储单元的操作余量。 为此，作为存储单元的电源电压，从用于存储单元的电源线提供高于外围电路用电源线的电源电压Vdd的电压Vdd'。 由于驱动器MOS晶体管的电导被增加，所以可以在不降低静态噪声容限的情况下减小存储单元内的MOS晶体管的阈值电压。 此外，可以将驱动器MOS晶体管和转移MOS晶体管之间的宽度比设置为1，从而允许存储单元区域的减小。
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公开(公告)号：US20080143423A1
公开(公告)日：2008-06-19
申请号：US11943095
申请日：2007-11-20
IPC分类号： H03K3/01 , H01L21/8238
CPC分类号： H01L27/092 , H01L21/823878 , H01L21/823892 , H01L27/1203 , H03K19/0027 , H03K19/00315
摘要： The present invention is directed to realize high manufacture yield and compensate variations in threshold voltage of a MOS transistor with small overhead. A semiconductor integrated circuit includes a CMOS circuit for processing an input signal in an active mode, a control switch, and a control memory. The control switch supplies a pMOS body bias voltage and an nMOS body bias voltage to an N well in a pMOS transistor and a P well in an nMOS transistor, respectively, in the CMOS circuit. The control memory stores control information indicating whether or not the pMOS body bias voltage and the nMOS body bias voltage are supplied from the control switch to the N well in the pMOS transistor and the P well in the nMOS transistor, respectively, in the CMOS circuit in the active mode.
摘要翻译： 本发明旨在实现高制造成品率并补偿具有较小开销的MOS晶体管的阈值电压的变化。 半导体集成电路包括用于处理活动模式中的输入信号的CMOS电路，控制开关和控制存储器。 控制开关分别向CMOS电路中的nMOS晶体管中的pMOS晶体管和P阱中的N阱施加pMOS体偏置电压和nMOS体偏置电压。 控制存储器存储指示pMOS体偏置电压和nMOS体偏置电压是否从控制开关提供到CMOS电路中的nMOS晶体管中的pMOS晶体管和P阱中的N阱的控制信息 处于活动模式。
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公开(公告)号：US20070246767A1
公开(公告)日：2007-10-25
申请号：US11812694
申请日：2007-06-21
IPC分类号： H01L29/76
CPC分类号： H01L29/78648 , G11C11/412 , H01L21/823878 , H01L21/84 , H01L27/0928 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/4908 , H01L29/78609 , H01L2924/0002 , H01L2924/00
摘要： Thresholds of MISFETS of a Full Depletion-type SOI substrate cannot be controlled by changing impurity density as with bulk silicon MISFETs. Therefore, it is difficult to set a suitable threshold for each circuit. According to the semiconductor device of the present invention, gate electrodes of P-channel type MISFETs composing a memory cell are made of N-type polysilicon, gate electrodes of N-channel type MISFETs are made of P-type polysilicon and gate electrodes of P-channel type and N-channel type MISFETs of peripheral circuits and a logic circuit are made of P-type silicon germanium. A suitable threshold can be achieved for each circuit using a SOI substrate, thereby making it possible to fully leverage the characteristics of the SOI substrate.
摘要翻译： 完全耗尽型SOI衬底的MISFETS的阈值不能通过改变杂质密度来控制，就像体硅硅MISFET那样。 因此，难以为每个电路设定合适的阈值。 根据本发明的半导体器件，构成存储单元的P沟道型MISFET的栅电极由N型多晶硅制成，N沟道型MISFET的栅电极由P型多晶硅制成，栅电极为P 通道型和外围电路的N沟道型MISFET和逻辑电路由P型硅锗制成。 对于使用SOI衬底的每个电路，可以实现合适的阈值，从而可以充分利用SOI衬底的特性。
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