发明申请
US20120219724A1 METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM
审中-公开
形成金属氧化物膜的方法，形成锰氧化物膜的方法和计算机可读存储介质
- 专利标题： METHOD FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING MANGANESE OXIDE FILM, AND COMPUTER-READABLE STORAGE MEDIUM
- 专利标题（中）： 形成金属氧化物膜的方法，形成锰氧化物膜的方法和计算机可读存储介质
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申请号： US13497929申请日： 2010-09-17
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公开(公告)号： US20120219724A1公开(公告)日： 2012-08-30
- 发明人: Koji Neishi , Junichi Koike , Kenji Matsumoto
- 申请人： Koji Neishi , Junichi Koike , Kenji Matsumoto
- 申请人地址： JP Miyagi JP Tokyo
- 专利权人： TOHOKU UNIVERSITY,TOKYO ELECTRON LIMITED
- 当前专利权人： TOHOKU UNIVERSITY,TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Miyagi JP Tokyo
- 优先权： JP2009-219283 20090924
- 国际申请： PCT/JP2010/066228 WO 20100917
- 主分类号： C23C16/18
- IPC分类号： C23C16/18 ; C23C16/52 ; C23C16/50
摘要：
In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.