公开(公告)号：US08242015B2

公开(公告)日：2012-08-14

申请号：US12631556

申请日：2009-12-04

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/4763

CPC分类号： C23C16/045 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.

摘要翻译： 在待处理物体的表面上，通过使用含Mn的源气体（或含Mn源气体，和含有Mn的源气体），通过热处理（CVD或ALD）形成含Mn的薄膜或含CuMn的合金薄膜 含Cu气体）和含氧气体（例如水蒸气）作为处理气体。 含Mn薄膜或含CuMn合金薄膜可以形成在形成在待处理物体表面上的细凹槽中的高阶覆盖。

公开(公告)号：US08859421B2

公开(公告)日：2014-10-14

申请号：US13267227

申请日：2011-10-06

申请人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

发明人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  C23C16/40

CPC分类号： H01L23/53238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/406 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76867 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.

摘要翻译： 提供了能够形成对Cu具有高粘合性的氧化锰膜的氧化锰膜形成方法。 在氧化锰膜形成方法中，通过向氧化物供给含锰气体，在氧化物上形成氧化锰膜。 用于形成氧化锰膜的成膜温度设定为等于或高于约100℃且低于约400℃

公开(公告)号：US20120219724A1

公开(公告)日：2012-08-30

申请号：US13497929

申请日：2010-09-17

申请人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

发明人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

IPC分类号： C23C16/18 ,  C23C16/52 ,  C23C16/50

CPC分类号： C23C16/40 ,  H01L21/28556 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method for forming a metal oxide film, by which excellent adhesion between the film and Cu can be provided, a gas containing an organometallic compound is supplied to a base, and the metal oxide film is formed on the base. After forming the metal oxide film on the base by supplying the organometallic compound to the base, the metal oxide film is exposed to the oxygen-containing gas or oxygen-containing plasma in the final step of the process of forming the metal oxide film.

摘要翻译： 在形成金属氧化物膜的方法中，通过可以提供膜和Cu之间的优异的粘附性，将含有有机金属化合物的气体供应到基底，并且在基底上形成金属氧化物膜。 在通过向基体供给有机金属化合物而在基材上形成金属氧化物膜之后，在形成金属氧化物膜的工序的最后步骤中，将金属氧化物膜暴露于含氧气体或含氧等离子体。

公开(公告)号：US20120135612A1

公开(公告)日：2012-05-31

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08008184B2

公开(公告)日：2011-08-30

申请号：US12627602

申请日：2009-11-30

申请人： Kenji Matsumoto ,  Shigetoshi Hosaka ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Shigetoshi Hosaka ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/28556 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.

摘要翻译： 在绝缘膜的表面上并沿着绝缘膜的凹部形成种子层，并且在铜布线埋入凹部中之后形成阻挡膜，并且从布线去除过量的金属。 在露出在凹部底部的铜下层导电通路的表面上，铜的天然氧化物被还原或去除。 在自然氧化物被还原或除去的基底上，形成由氧化倾向高于铜的自形成阻挡金属或这种金属和铜的合金构成的晶种层。 在将铜埋入凹槽中之后，将衬底加热。 因此，通过氧化自形成阻挡金属形成阻挡层。 自形成阻挡金属的过多部分沉积在掩埋铜的表面上。

公开(公告)号：US20100233876A1

公开(公告)日：2010-09-16

申请号：US12303831

申请日：2007-06-08

申请人： Kenji Matsumoto ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L21/768 ,  C23C16/458

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/45529 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76877 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film.

摘要翻译： 在成膜方法中，首先将基板装载到真空排气处理室中。 至少含有过渡金属的源气体和还原气体被供给到处理室中，并且加热基板。 然后，通过热处理在基板的表面的凹部中形成薄膜。 因此，可以用铜膜填充基板的表面凹部。

公开(公告)号：US08865590B2

公开(公告)日：2014-10-21

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/40 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08247321B2

公开(公告)日：2012-08-21

申请号：US12864824

申请日：2009-01-20

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L21/4763

CPC分类号： C23C16/40 ,  C23C28/00 ,  C23C28/322 ,  C23C28/345 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844

摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

摘要翻译： 当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部 可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。 暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。 然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰 而在铜布线的表面上不允许生成氧化锰。 此后，铜嵌入凹槽中。

公开(公告)号：US20120025380A1

公开(公告)日：2012-02-02

申请号：US13267227

申请日：2011-10-06

申请人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

发明人： Koji Neishi ,  Junichi Koike ,  Kenji Matsumoto

IPC分类号： H01L23/532 ,  H01L21/283 ,  B05D5/12

CPC分类号： H01L23/53238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/406 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76867 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： There is provided a manganese oxide film forming method capable of forming a manganese oxide film having high adhesivity to Cu. In the manganese oxide film forming method, a manganese oxide film is formed on an oxide by supplying a manganese-containing gas onto the oxide. A film forming temperature for forming the manganese oxide film is set to be equal to or higher than about 100° C. and lower than about 400° C.

摘要翻译： 提供了能够形成对Cu具有高粘合性的氧化锰膜的氧化锰膜形成方法。 在氧化锰膜形成方法中，通过向氧化物供给含锰气体，在氧化物上形成氧化锰膜。 用于形成氧化锰膜的成膜温度设定为等于或高于约100℃且低于约400℃

公开(公告)号：US20110049718A1

公开(公告)日：2011-03-03

申请号：US12864824

申请日：2009-01-20

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato ,  Junichi Koike ,  Koji Neishi

IPC分类号： H01L23/48 ,  H01L21/768 ,  B05C13/02

CPC分类号： C23C16/40 ,  C23C28/00 ,  C23C28/322 ,  C23C28/345 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76844

摘要： When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

摘要翻译： 当在衬底上的层间绝缘膜的暴露表面上形成阻挡膜时，形成有形成在其中的凹部的层间绝缘膜和与下层中的金属布线电连接的金属布线形成在凹部 可以形成具有优异的台阶覆盖的阻挡膜，并且可以抑制布线电阻的增加。 暴露在层间绝缘膜的底面的下铜布线的表面上的氧化膜被还原或边缘化以去除铜布线表面上的氧。 然后，通过供给含有锰并且不含氧的有机金属化合物，在包含氧的区域，例如凹部的侧壁和层间绝缘膜的表面上，选择性地允许产生作为自形成阻挡膜的氧化锰 而在铜布线的表面上不允许生成氧化锰。 此后，铜嵌入凹槽中。