Invention Application
- Patent Title: METHOD AND SYSTEM FOR DESIGN OF ENHANCED EDGE SLOPE PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY
- Patent Title (中): 用于加载粒子束光刻的增强边坡图案的设计方法和系统
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Application No.: US13037270Application Date: 2011-02-28
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Publication No.: US20120221981A1Publication Date: 2012-08-30
- Inventor: Akira Fujimura , Kazuyuki Hagiwara , Stephen F. Meier , Ingo Bork
- Applicant: Akira Fujimura , Kazuyuki Hagiwara , Stephen F. Meier , Ingo Bork
- Applicant Address: US CA San Jose
- Assignee: D2S, INC.
- Current Assignee: D2S, INC.
- Current Assignee Address: US CA San Jose
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
Public/Granted literature
- US09057956B2 Method and system for design of enhanced edge slope patterns for charged particle beam lithography Public/Granted day:2015-06-16
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