Method and system for forming high accuracy patterns using charged particle beam lithography
    2.
    发明授权
    Method and system for forming high accuracy patterns using charged particle beam lithography 有权
    使用带电粒子束光刻法形成高精度图案的方法和系统

    公开(公告)号:US08473875B2

    公开(公告)日:2013-06-25

    申请号:US13168954

    申请日:2011-06-25

    IPC分类号: G06F17/50

    摘要: A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.

    摘要翻译: 公开了一种用于压电或掩模用于带电粒子束光刻的数据准备的方法和系统,其中通过使用部分重叠的镜头来增强由一组带电粒子束照射在表面上形成的图案的精度和/或边缘斜率。 在一些实施例中,射击的剂量可以在邻近效应校正之前相对于彼此而变化。 可以使用粒子束模拟来计算图案和边缘坡度。 增强的边缘斜率可以改善表面上产生的图案的临界尺寸(CD)变化和线边缘粗糙度(LER)。

    Method and system for infrared detection of electrical short defects
    5.
    发明授权
    Method and system for infrared detection of electrical short defects 失效
    红外检测电短缺的方法和系统

    公开(公告)号:US06714017B2

    公开(公告)日:2004-03-30

    申请号:US09727952

    申请日:2000-11-30

    IPC分类号: G01R3100

    CPC分类号: G09G3/006 G01R31/308

    摘要: A method and system for detecting electrical short circuit defects in a plate structure of a flat panel display, for example, a field emission display (FED) is disclosed. In one embodiment, the process first applies a stimulation to the electrical conductors of the plate structure. Next, the process creates an infra-red thermal mapping of a cathode region of the FED. For example, an infra-red array may be used to snap a picture of the cathode of the FED. Then, the process analyzes the infra-red thermal mapping to determine a region of the FED which contains the electrical short circuit defect. Another embodiment localizes the defect to one sub-pixel by performing an infra-red mapping of the region which the previous IR mapping process determined to contain the electrical short circuit defect. Then, the process analyzes this infra-red mapping to determine a sub-pixel of the FED which contains the electrical short circuit defect.

    摘要翻译: 公开了一种用于检测平板显示器的板结构中的电短路缺陷的方法和系统,例如场致发射显示器(FED)。 在一个实施例中,该过程首先对板结构的电导体施加刺激。 接下来,该过程创建FED的阴极区域的红外热映射。 例如,可以使用红外阵列来捕捉FED的阴极的图像。 然后,该过程分析红外热映射以确定包含电短路缺陷的FED的区域。 另一个实施例通过执行确定为包含电短路缺陷的先前IR映射处理的区域的红外映射来将缺陷定位到一个子像素。 然后,该过程分析该红外映射以确定包含电短路缺陷的FED的子像素。

    Method and System for Forming High Accuracy Patterns Using Charged Particle Beam Lithography
    8.
    发明申请
    Method and System for Forming High Accuracy Patterns Using Charged Particle Beam Lithography 有权
    使用带电粒子光刻法形成高精度图案的方法和系统

    公开(公告)号:US20120096412A1

    公开(公告)日:2012-04-19

    申请号:US13168954

    申请日:2011-06-25

    IPC分类号: G06F17/50

    摘要: A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.

    摘要翻译: 公开了一种用于压电或掩模用于带电粒子束光刻的数据准备的方法和系统,其中通过使用部分重叠的镜头来增强由一组带电粒子束照射在表面上形成的图案的精度和/或边缘斜率。 在一些实施例中,射击的剂量可以在邻近效应校正之前相对于彼此而变化。 可以使用粒子束模拟来计算图案和边缘坡度。 增强的边缘斜率可以改善表面上产生的图案的临界尺寸(CD)变化和线边缘粗糙度(LER)。