摘要:
This is a method of quickly computing the power dissipated by a digital circuit using information available at the gate library level. It estimates the short-circuit power by modeling the energy dissipated by the cell per input transition as a function of the transition time or edge rate, and multiplying that value by the number of transitions per second for that input.
摘要:
A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.
摘要:
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要:
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要:
A method and system for detecting electrical short circuit defects in a plate structure of a flat panel display, for example, a field emission display (FED) is disclosed. In one embodiment, the process first applies a stimulation to the electrical conductors of the plate structure. Next, the process creates an infra-red thermal mapping of a cathode region of the FED. For example, an infra-red array may be used to snap a picture of the cathode of the FED. Then, the process analyzes the infra-red thermal mapping to determine a region of the FED which contains the electrical short circuit defect. Another embodiment localizes the defect to one sub-pixel by performing an infra-red mapping of the region which the previous IR mapping process determined to contain the electrical short circuit defect. Then, the process analyzes this infra-red mapping to determine a sub-pixel of the FED which contains the electrical short circuit defect.
摘要:
This is a method of quickly computing the power dissipated by a digital circuit using information available at the gate library level. It estimates the short-circuit power by modeling the energy dissipated by the cell per input transition as a function of the transition time or edge rate, and multiplying that value by the number of transitions per second for that input.
摘要:
A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要:
A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.
摘要:
This is a method of quickly computing the power dissipated by a digital circuit using information available at the gate library level. It estimates the short-circuit power by modeling the energy dissipated by the cell per input transition as a function of the transition time or edge rate, and multiplying that value by the number of transitions per second for that input.
摘要:
This is a method of quickly computing the power dissipated by a digital circuit using information available at the gate library level. It estimates the short-circuit power by modeling the energy dissipated by the cell per input transition as a function of the transition time or edge rate, and multiplying that value by the number of transitions per second for that input.