发明申请
- 专利标题： CAPACITIVE SEMICONDUCTOR PRESSURE SENSOR
- 专利标题（中）： 电容式半导体压力传感器
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申请号： US13446976申请日： 2012-04-13
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公开(公告)号： US20120223402A1公开(公告)日： 2012-09-06
- 发明人: Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
- 申请人： Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
- 申请人地址： IT Agrate Brianza
- 专利权人： STMICROELECTRONICS S.R.L.
- 当前专利权人： STMICROELECTRONICS S.R.L.
- 当前专利权人地址： IT Agrate Brianza
- 优先权： EP04425197.3 20040319
- 主分类号： H01L29/84
- IPC分类号： H01L29/84
摘要：
A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.
公开/授权文献
- US08575710B2 Capacitive semiconductor pressure sensor 公开/授权日：2013-11-05
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