- 专利标题： SPUTTERING TARGET AND THIN FILM TRANSISTOR EQUIPPED WITH SAME
- 专利标题（中）： 溅射目标和薄膜晶体管
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申请号： US13510934申请日： 2010-11-18
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公开(公告)号： US20120228608A1公开(公告)日： 2012-09-13
- 发明人: Koki Yano , Masayuki Itose
- 申请人： Koki Yano , Masayuki Itose
- 优先权： JP2009-264307 20091119
- 国际申请： PCT/JP2010/006765 WO 20101118
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; C09D1/00 ; C23C14/08 ; H01L29/786
摘要：
A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO3(ZnO): 0.28≦Zn/(In+Zn+Ga)≦0.38 0.18≦Ga/(In+Zn+Ga)≦0.28.
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