发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13370000申请日： 2012-02-09
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公开(公告)号： US20120228774A1公开(公告)日： 2012-09-13
- 发明人: Takahisa FURUHASHI , Naohito Suzumura
- 申请人： Takahisa FURUHASHI , Naohito Suzumura
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 优先权： JP2011-053007 20110310
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768
摘要：
A barrier insulating film is constituted from a first SiCN film formed with a tetramethylsilane gas flow rate lower than usual, a second SiCN film formed over the first SiCN film and formed with a usual tetramethylsilane gas flow rate, and a SiCO film formed over the second SiCN film.
公开/授权文献
- US08778793B2 Semiconductor device and method of manufacturing the same 公开/授权日：2014-07-15