发明申请
- 专利标题： PROCESS OF PURIFYING RUTHENIUM PRECURSORS
- 专利标题（中）： 净化前辈的工艺
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申请号： US13230033申请日： 2011-09-12
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公开(公告)号： US20120231180A1公开(公告)日： 2012-09-13
- 发明人: Bin XIA , Zhiwen Wan , Ashutosh Misra , Olivier Letessier
- 申请人： Bin XIA , Zhiwen Wan , Ashutosh Misra , Olivier Letessier
- 申请人地址： US TX Dallas
- 专利权人： Air Liquide Electronics U.S. LP
- 当前专利权人： Air Liquide Electronics U.S. LP
- 当前专利权人地址： US TX Dallas
- 主分类号： C09D5/00
- IPC分类号： C09D5/00 ; C23C16/50 ; C23C16/06
摘要：
Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.
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