发明申请
US20120231622A1 SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME
有权
自对准双DAMASCENE BEOL结构与方形低K材料及其形成方法
- 专利标题： SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME
- 专利标题（中）： 自对准双DAMASCENE BEOL结构与方形低K材料及其形成方法
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申请号： US13474349申请日： 2012-05-17
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公开(公告)号： US20120231622A1公开(公告)日： 2012-09-13
- 发明人: Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
- 申请人： Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.
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