发明申请
- 专利标题: NITRIDE GATE DIELECTRIC FOR GRAPHENE MOSFET
- 专利标题(中): 用于石墨MOSFET的氮化物电介质
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申请号: US13051707申请日: 2011-03-18
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公开(公告)号: US20120235118A1公开(公告)日: 2012-09-20
- 发明人: Phaedon Avouris , Deborah Neumayer , Wenjuan Zhu
- 申请人: Phaedon Avouris , Deborah Neumayer , Wenjuan Zhu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.
公开/授权文献
- US08530886B2 Nitride gate dielectric for graphene MOSFET 公开/授权日:2013-09-10