公开(公告)号：US20120235118A1

公开(公告)日：2012-09-20

申请号：US13051707

申请日：2011-03-18

申请人： Phaedon Avouris ,  Deborah Neumayer ,  Wenjuan Zhu

发明人： Phaedon Avouris ,  Deborah Neumayer ,  Wenjuan Zhu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/518 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78684

摘要： A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.

摘要翻译： 一种包括衬底的半导体结构; 基板上的石墨烯层; 在石墨烯层上的源电极和漏电极，源电极和漏极间隔开预定尺寸; 在源电极和漏电极之间的石墨烯层上的氮化物层; 以及氮化物层上的栅极电极，其中氮化物层是用于栅电极的栅极电介质。

公开(公告)号：US20080044668A1

公开(公告)日：2008-02-21

申请号：US11034479

申请日：2005-01-13

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

IPC分类号： B32B9/04 ,  B32B13/04

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不大于2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US20070164337A1

公开(公告)日：2007-07-19

申请号：US11687000

申请日：2007-03-16

申请人： James Adkisson ,  Charles Black ,  Alfred Grill ,  Randy Mann ,  Deborah Neumayer ,  Wilbur Pricer ,  Katherine Saenger ,  Thomas Shaw

发明人： James Adkisson ,  Charles Black ,  Alfred Grill ,  Randy Mann ,  Deborah Neumayer ,  Wilbur Pricer ,  Katherine Saenger ,  Thomas Shaw

IPC分类号： H01L29/94

CPC分类号： H01L28/55 ,  H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  Y10S438/977

摘要： A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.

摘要翻译： 提供了一种形成集成的铁电/ CMOS结构的方法，其有效地分离不兼容的高温沉积和退火工艺。 本发明的方法包括分别形成CMOS结构和铁电输送晶片。 然后使这些分离的结构与每个结构接触，并且通过使用低温退火步骤将输送晶片的铁电体膜结合到CMOS结构的上导电电极层。 然后去除输送晶片的一部分，提供集成的FE / CMOS结构，其中铁电电容器形成在CMOS结构的顶部。 电容器通过CMOS结构的所有布线级与CMOS结构的晶体管接触。

公开(公告)号：US20070161256A1

公开(公告)日：2007-07-12

申请号：US11329560

申请日：2006-01-11

申请人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

公开(公告)号：US20050082624A1

公开(公告)日：2005-04-21

申请号：US10689222

申请日：2003-10-20

申请人： Evgeni Gousev ,  Alessandro Callegari ,  Dianne Lacey ,  Deborah Neumayer ,  Huiling Shang

发明人： Evgeni Gousev ,  Alessandro Callegari ,  Dianne Lacey ,  Deborah Neumayer ,  Huiling Shang

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/94

CPC分类号： H01L21/28194 ,  H01L21/02112 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28264 ,  H01L21/31604 ,  H01L29/517 ,  H01L29/518

摘要： A structure, and method of fabrication, for high performance semiconductor field effect devices is disclosed. These devices are having a gate dielectric containing a germanate material. In representative embodiments the gate dielectric is essentially a layer of a germanate material. The chemical composition of such materials is MezGexOy, where Me stands for a metal with high ion polarizability, and x, y, and z are non-zero integers. Such a gate dielectric is advantageous, from the point of view of dielectric constant, barrier height, carrier mobility, thermal stability, and interface stability.

摘要翻译： 公开了一种用于高性能半导体场效应器件的结构和制造方法。 这些器件具有含有锗酸盐材料的栅极电介质。 在代表性的实施例中，栅极电介质基本上是锗酸盐材料层。 这种材料的化学成分是Me z O x O x O y，其中Me代表具有高离子极化率的金属，x，y ，z是非零整数。 从介电常数，势垒高度，载流子迁移率，热稳定性和界面稳定性的观点来看，这种栅极电介质是有利的。

公开(公告)号：US20060138603A1

公开(公告)日：2006-06-29

申请号：US11281032

申请日：2005-11-17

申请人： Cyril Cabral ,  Alessandro Callegari ,  Michael Gribelyuk ,  Paul Jamison ,  Dianne Lacey ,  Fenton McFeely ,  Vijay Narayanan ,  Deborah Neumayer ,  Pushkar Ranade ,  Sufi Zafar

发明人： Cyril Cabral ,  Alessandro Callegari ,  Michael Gribelyuk ,  Paul Jamison ,  Dianne Lacey ,  Fenton McFeely ,  Vijay Narayanan ,  Deborah Neumayer ,  Pushkar Ranade ,  Sufi Zafar

IPC分类号： H01L23/58

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/823857 ,  H01L27/0805 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

公开(公告)号：US20050245096A1

公开(公告)日：2005-11-03

申请号：US10838849

申请日：2004-05-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US5330843A

公开(公告)日：1994-07-19

申请号：US530715

申请日：1990-05-30

申请人： Chia-Chih Ou ,  Deborah Neumayer

发明人： Chia-Chih Ou ,  Deborah Neumayer

IPC分类号： C04B14/20 ,  C04B20/02

CPC分类号： C04B14/208 ,  C04B30/00 ,  Y10T428/31

摘要： A method of rendering water resistant a vermiculite article such as a film or coating comprised of delaminated vermiculite lamellae is provided comprising the step of contacting the article with a solution of an inorganic monovalent cation selected from the group consisting of: H.sup.+, Na.sup.+, K.sup.+, Cs.sup.+, Rb.sup.+ and Fr.sup.+ and mixtures thereof.The invention further relates to a water resistant article such as a film or coating comprised of delaminated vermiculite lamellae, which article is produced by contacting the article with a solution of an inorganic monovalent cation selected from the group consisting of: H.sup.+, Na.sup.+, K.sup.+, Cs.sup.+, Rb.sup.+ and Fr.sup.+.

摘要翻译： 提供了一种使蛭石制品如由分层的蛭石薄片组成的薄膜或涂层的耐水性的方法，包括使制品与无机一价阳离子的溶液接触的步骤，所述无机一价阳离子选自H +，Na +，K +， Cs +，Rb +和Fr +及其混合物。 本发明还涉及一种防水制品，例如由分层的蛭石薄片组成的薄膜或涂层，该制品通过使制品与无机一价阳离子的溶液接触而制备，所述无机一价阳离子选自：H +，Na +，K +， Cs +，Rb +和Fr +。

公开(公告)号：US5244740A

公开(公告)日：1993-09-14

申请号：US530714

申请日：1990-05-30

申请人： Chia-Chih Ou ,  Deborah Neumayer

发明人： Chia-Chih Ou ,  Deborah Neumayer

IPC分类号： C04B14/20

CPC分类号： C04B14/208 ,  Y10S106/01 ,  Y10T428/31

摘要： A water resistant or repellant article comprised of delaminated vermiculite lamellae is provided, which article is produced by immersing the article in a solution of a cationic exchange agent.The invention further relates to a method of producing such a water resistant or repellant article comprising the step of contacting the film with a solution of a cationic exchange agent.

公开(公告)号：US07628974B2

公开(公告)日：2009-12-08

申请号：US10689675

申请日：2003-10-22

申请人： Alfred Grill ,  Deborah Neumayer ,  Dinkar Singh

发明人： Alfred Grill ,  Deborah Neumayer ,  Dinkar Singh

IPC分类号： D01C5/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/36 ,  C30B25/00 ,  C30B25/105 ,  C30B29/605 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/843

摘要： The diameter of carbon nanotubes grown by chemical vapor deposition is controlled independent of the catalyst size by controlling the residence time of reactive gases in the reactor.

摘要翻译： 通过化学气相沉积生长的碳纳米管的直径通过控制反应性气体在反应器中的停留时间独立于催化剂尺寸来控制。