发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13236723申请日： 2011-09-20
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公开(公告)号： US20120235221A1公开(公告)日： 2012-09-20
- 发明人: Megumi ISHIDUKI , Ryota Katsumata , Tomo Ohsawa , Mitsuru Sato , Masaru Kidoh , Hiroyasu Tanaka
- 申请人： Megumi ISHIDUKI , Ryota Katsumata , Tomo Ohsawa , Mitsuru Sato , Masaru Kidoh , Hiroyasu Tanaka
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-057937 20110316
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/425
摘要：
According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.
公开/授权文献
- US08581329B2 Semiconductor device and method for manufacturing same 公开/授权日：2013-11-12
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