发明申请
US20120235274A1 SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR FOR EMBEDDED DYNAMIC RANDOM ACCESS MEMORY (EDRAM) AND METHOD TO FORM THE SAME
审中-公开
具有用于嵌入式动态随机存取存储器（EDRAM）的集成双壁电容器的半导体结构及其形成方法
- 专利标题： SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR FOR EMBEDDED DYNAMIC RANDOM ACCESS MEMORY (EDRAM) AND METHOD TO FORM THE SAME
- 专利标题（中）： 具有用于嵌入式动态随机存取存储器（EDRAM）的集成双壁电容器的半导体结构及其形成方法
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申请号： US13047656申请日： 2011-03-14
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公开(公告)号： US20120235274A1公开(公告)日： 2012-09-20
- 发明人: Brian S. Doyle , Charles C. Kuo , Nick Lindert , Uday Shah , Satyarth Suri , Robert S. Chau
- 申请人： Brian S. Doyle , Charles C. Kuo , Nick Lindert , Uday Shah , Satyarth Suri , Robert S. Chau
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/02
摘要：
Semiconductor structures having integrated double-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded double-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A U-shaped metal plate is disposed at the bottom of the trench, spaced apart from the sidewalls. A second dielectric layer is disposed on and conformal with the sidewalls of the trench and the U-shaped metal plate. A top metal plate layer is disposed on and conformal with the second dielectric layer.
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