发明申请
US20120235278A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM USING THE SAME
审中-公开
半导体集成电路装置及其制造方法以及使用该半导体集成电路的电子系统
- 专利标题： SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM USING THE SAME
- 专利标题（中）： 半导体集成电路装置及其制造方法以及使用该半导体集成电路的电子系统
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申请号： US13406356申请日： 2012-02-27
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公开(公告)号： US20120235278A1公开(公告)日： 2012-09-20
- 发明人: Hisao Shigihara , Hiromi Shigihara , Akira Yajima
- 申请人： Hisao Shigihara , Hiromi Shigihara , Akira Yajima
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 优先权： JP2011-055454 20110314
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/56 ; H01L23/498
摘要：
Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section 20A of the rewiring 20 is formed by a five-layer metal film (a barrier metal film 13, a seed film 14, a Cu film 15, a first Ni film 16, and a second Ni film 17) constituting the rewiring 20, the uppermost-layer second Ni film 17 has a larger area than that of the other metal films (the barrier metal film 13, the seed film 14, the Cu film 15, and the first Ni film 16). A solder bump 21 is connected to the surface of the second Ni film 17. At the end portion of the solder bump 21, a polyimide resin film 22 is formed directly under the second Ni film 17.
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