发明申请
- 专利标题: INTEGRATED CIRCUIT INCLUDING A BIPOLAR TRANSISTOR AND METHODS OF MAKING THE SAME
- 专利标题(中): 包含双极晶体管的集成电路及其制造方法
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申请号: US13047468申请日: 2011-03-14
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公开(公告)号: US20120235280A1公开(公告)日: 2012-09-20
- 发明人: Wei-Tung HUANG , Chun-Tsung KUO , Shih-Chang LIU , Yeur-Luen TU
- 申请人: Wei-Tung HUANG , Chun-Tsung KUO , Shih-Chang LIU , Yeur-Luen TU
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L29/735
- IPC分类号: H01L29/735 ; H01L21/331
摘要:
An integrated circuit includes a bipolar transistor disposed over a substrate. The bipolar transistor includes a base electrode disposed around at least one germanium-containing layer. An emitter electrode is disposed over the at least one germanium-containing layer. At least one isolation structure is disposed between the emitter electrode and the at least one germanium-containing layer. A top surface of the at least one isolation structure is disposed between and electrically isolating a top surface of the emitter electrode from a top surface of the at least one germanium-containing layer.